Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal

Threshold-voltage bias-temperature instability in commercially-available SiC MOSFETs

Modeling and Characterization of 4h-sic Mosfets: High Field, High Temperature, and Transient Effects

Title of Dissertation: MODELING AND CHARACTERIZATION OF 4H-SIC MOSFETS: HIGH FIELD, HIGH TEMPERATURE, AND TRANSIENT EFFECTS Siddharth Potbhare, Doctor of Philosophy, 2008 Directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering We present detailed physics based numerical models for characterizing 4HSilicon Carbide lateral MOSFETs and vertical power DMOSFETs for hig...

Threshold voltage instabilities of present SiC-power MOSFETs under positive bias temperature stress

We study the threshold voltage (Vth) instability of commercially available silicon carbide (SiC) power MOSFETs or prototypes from four different manufacturers under positive bias temperature stress (PBTS). A positive bias near Vth causes a threshold voltage shift of 0.7 mV per decade in time per nanometer oxide thickness in the temperature range between -50°C and 150°C. Recovery at +5 V after a...

High temperature pulsed-gate robustness testing of SiC power MOSFETs

High Temperature Modeling and Characterization of 6H SiC MOSFETs

(Abstract) SiC offers the potential to provide high power, high temperature electronics. Our two-dimensional is used to model the current voltage characteristics of a 6H-SiC MOSFET as a function of temperature, from 25C to 200C. (Intro) In our previous paper[1], we developed a new detailed mobility model for Silicon Carbide (SiC) MOSFETs. The new model explicitly accounts for the contribution o...